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6N60K-MT Datenblatt(PDF) 1 Page - Unisonic Technologies |
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1 / 7 page UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Preliminary Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R205-021.d 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL |
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