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SI1012CR Datenblatt(PDF) 2 Page - Vishay Telefunken

Teilenummer SI1012CR
Bauteilbeschribung  N-Channel 20 V (D-S) MOSFET
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Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
Vishay Siliconix
Si1012CR
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
17
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 1.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 30
µA
VDS = 0 V, VGS = ± 4.5 V
± 1
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
10
On-State Drain Currenta
ID(on)
VDS =  5 V, VGS = 4.5 V
2
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 0.6 A
0.330
0.396
VGS = 2.5 V, ID = 0.3 A
0.380
0.456
VGS = 1.8 V, ID = 0.3 A
0.420
0.546
VGS = 1.5 V, ID = 0.05 A
0.720
1.100
Forward Transconductance
gfs
VDS = 10 V, ID = 0.5 A
7.5
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
43
pF
Output Capacitance
Coss
14
Reverse Transfer Capacitance
Crss
8
Total Gate Charge
Qg
VDS = 10 V, VGS = 8 V, ID = 0.6 A
1.3
2
nC
VDS = 10 V, VGS = 4.5 V, ID = 0.6 A
0.75
1.2
Gate-Source Charge
Qgs
0.15
Gate-Drain Charge
Qgd
0.13
Gate Resistance
Rg
f = 1 MHz
2.4
12.2
24.4
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 20 
ID  0.5 A, VGEN = 4.5 V, Rg = 1 
11
20
ns
Rise Time
tr
16
24
Turn-Off Delay Time
td(off)
26
39
Fall Time
tf
11
20
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
2A
Body Diode Voltage
VSD
IS = 0.5 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 0.5 A, dI/dt = 100 A/µs
10
15
ns
Body Diode Reverse Recovery Charge
Qrr
24
nC
Reverse Recovery Fall Time
ta
5
ns
Reverse Recovery Rise Time
tb
5


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