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SI1012CR Datenblatt(PDF) 2 Page - Vishay Telefunken |
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SI1012CR Datenblatt(HTML) 2 Page - Vishay Telefunken |
2 / 9 page www.vishay.com 2 Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 Vishay Siliconix Si1012CR This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 17 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 1.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 30 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 2 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.6 A 0.330 0.396 VGS = 2.5 V, ID = 0.3 A 0.380 0.456 VGS = 1.8 V, ID = 0.3 A 0.420 0.546 VGS = 1.5 V, ID = 0.05 A 0.720 1.100 Forward Transconductance gfs VDS = 10 V, ID = 0.5 A 7.5 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 43 pF Output Capacitance Coss 14 Reverse Transfer Capacitance Crss 8 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 0.6 A 1.3 2 nC VDS = 10 V, VGS = 4.5 V, ID = 0.6 A 0.75 1.2 Gate-Source Charge Qgs 0.15 Gate-Drain Charge Qgd 0.13 Gate Resistance Rg f = 1 MHz 2.4 12.2 24.4 Turn-On Delay Time td(on) VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, Rg = 1 11 20 ns Rise Time tr 16 24 Turn-Off Delay Time td(off) 26 39 Fall Time tf 11 20 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 2A Body Diode Voltage VSD IS = 0.5 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 0.5 A, dI/dt = 100 A/µs 10 15 ns Body Diode Reverse Recovery Charge Qrr 24 nC Reverse Recovery Fall Time ta 5 ns Reverse Recovery Rise Time tb 5 |
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