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BAT62-03W Datenblatt(PDF) 2 Page - Infineon Technologies AG

Teilenummer BAT62-03W
Bauteilbeschribung  Low barrier diode for detectors up to GHz frequencies
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BAT62-03W Datenblatt(HTML) 2 Page - Infineon Technologies AG

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2014-02-13
2
BAT62...
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
40
V
Forward current
IF
20
mA
Total power dissipation
BAT62, TS ≤ 85 °C
BAT62-02L, -07L4, -03W, TS ≤ 108 °C
BAT62-02W, -02V, TS ≤ 109 °C
BAT62-07W, TS ≤ 103 °C
BAT62-09S, TS ≤ 105 °C
Ptot
100
100
100
100
100
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
BAT62
BAT62-02L, -07L4, -03W
BAT62-02W, 02V
BAT62-07W
BAT62-09S
RthJS
≤ 650
≤ 420
≤ 410
≤ 470
≤ tbd
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
VR = 40 V
IR
-
-
10
µA
Forward voltage
IF = 2 mA
VF
-
0.58
1
V
Forward voltage matching2)
IF = 2 mA
∆ VF
-
-
20
mV
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2∆VF is the difference between lowest and highest VF in a multiple diode component.


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