SIZ730DT datasheet(1/14 Pages) TFUNK

Teilenummer	SIZ730DT

Bauteilbeschribung	N-Channel 30 V (D-S) MOSFETs

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Hersteller	TFUNK [Vishay Telefunken]

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Vishay Siliconix

SiZ730DT

New Product

Document Number: 67648

S11-2380-Rev. B, 28-Nov-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFETs

Ordering Information: SiZ730DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

G1

G2

S2

D1

1

6

5

4

2

3

3.73 mm

6 mm

PowerPAIR® 6 x 3.7

D1

S1/D2

Pin 1

Pin 7

D1

S2

N-Channel 2

MOSFET

N-Channel 1

MOSFET

G1

S1/D2

G2

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

16a

35a

A

TC = 70 °C

16a

35a

TA = 25 °C

12.9b, c

26.4b, c

TA = 70 °C

10.3b, c

21.1b, c

Pulsed Drain Current (t = 300 µs)

IDM

70

100

Continuous Source Drain Diode Current

TC = 25 °C

IS

16a

35a

TA = 25 °C

3.2b, c

3.8b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

16

30

Single Pulse Avalanche Energy

EAS

13

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

27

48

W

TC = 70 °C

17

31

TA = 25 °C

3.9b, c

4.6b, c

TA = 70 °C

2.5b, c

3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

24

32

20

27

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

3.5

4.6

2

2.6

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A) Qg (Typ.)

Channel-1

30

0.0093 at VGS = 10 V

16a

7.7 nC

0.0130 at VGS = 4.5 V

16a

Channel-2

30

0.0039 at VGS = 10 V

35a

21.2 nC

0.0053 at VGS = 4.5 V

35a

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

System Power

- Notebook

- Server

•

POL

•

Synchronous Buck Converter

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