Datenblatt-Suchmaschine für elektronische Bauteile |
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LC05132C01MT Datenblatt(PDF) 1 Page - ON Semiconductor |
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LC05132C01MT Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 16 page 1 Publication Order Number : LC05132C01MT/D www.onsemi.com © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 2 ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. LC05132C01MT Overview The LC05132C01MT is a protection IC for 1-cell lithium-ion secondary batteries with integrated power MOS FET. Also it integrates highly accurate detection circuits and detection delay circuits to prevent batteries from over-charging, over-discharging, over-current discharging and over-current charging. In addition, main system can execute the power-on reset of itself by turning off the charge FET and discharge FET of LC05132C01MT for a certain time period, with a reset signal. A battery protection system can be made by only LC05132C01MT and few external parts. Feature Charge-and-discharge power MOSFET are integrated at Ta = 25°C, VCC = 4.5V ON resistance (total of charge and discharge ) 11.2m (typ) Highly accurate detection voltage/current at Ta = 25°C, VCC = 3.7V Over-charge detection ±25mV Over-discharge detection ±50mV Charge over-current detection ±0.63A Discharge over-current detection ±0.63A Delay time for detection and release (fixed internally) Discharge/Charge over-current detection is compensated for temperature dependency of power FET 0V battery charging : “Inhibit” Auto wake-up function battery charging : “Inhibit” Over charge detection voltage : 4.0V to 4.525V (5mV steps) Over charge release hysteresis : 0V to 0.3V (100mV steps) Over discharge detection voltage : 2.2V to 2.8V (50mV steps) Over discharge release hysteresis : 0V to 0.075V (25mV steps) Forcible charge-FET and discharge-FET OFF mode RSTB>VDD*0.8: Charge-FET and Discharge-FET=ON RSTB<VDD*0.2: Charge-FET and Discharge-FET=OFF Typical Applications Smart phone Tablet Wearable device CMOS LSI 1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET WDFN6 2.6x4.0, 0.65P, Dual Flag |
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