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MTV10N100E Datenblatt(PDF) 3 Page - ON Semiconductor |
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MTV10N100E Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 11 page MTV10N100E http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 1000 — — 1254 — — Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 μAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 — 3.0 7.0 4.0 — Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 5.0 Adc) RDS(on) — 1.07 1.3 Ohm Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C) VDS(on) — — 11 — 15 15.3 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS 8.0 10 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 3500 5600 pF Output Capacitance Coss — 264 530 Transfer Capacitance Crss — 52 90 SWITCHING CHARACTERISTICS (2) Turn−On Delay Time (VDD = 500 Vdc, ID = 10 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 29 60 ns Rise Time tr — 57 120 Turn−Off Delay Time td(off) — 118 240 Fall Time tf — 70 140 Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 10 Adc, VGS = 10 Vdc) QT — 100 120 nC Q1 — 18.4 — Q2 — 33 — Q3 — 36.7 — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 10 Adc, VGS = 0 Vdc) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.885 0.8 1.1 — Vdc Reverse Recovery Time (IS = 10 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr — 885 — ns ta — 220 — tb — 667 — Reverse Recovery Stored Charge QRR — 8.0 — μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 13 — nH (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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