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MTV10N100E Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MTV10N100E
Bauteilbeschribung  Power Field Effect Transistor
Download  11 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTV10N100E Datenblatt(HTML) 3 Page - ON Semiconductor

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MTV10N100E
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
1254
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/°C
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
RDS(on)
1.07
1.3
Ohm
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C)
VDS(on)
11
15
15.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
8.0
10
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
3500
5600
pF
Output Capacitance
Coss
264
530
Transfer Capacitance
Crss
52
90
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time
(VDD = 500 Vdc, ID = 10 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
29
60
ns
Rise Time
tr
57
120
Turn−Off Delay Time
td(off)
118
240
Fall Time
tf
70
140
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
QT
100
120
nC
Q1
18.4
Q2
33
Q3
36.7
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.885
0.8
1.1
Vdc
Reverse Recovery Time
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
885
ns
ta
220
tb
667
Reverse Recovery Stored Charge
QRR
8.0
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
13
nH
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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