Datenblatt-Suchmaschine für elektronische Bauteile |
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2N2151 Datenblatt(PDF) 1 Page - Microsemi Corporation |
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2N2151 Datenblatt(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC0942A.DOC 11-03-98 2N2151 ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS SYMBOL CHARACTERISTIC VALUE UNITS VCBO* Collector-Base Voltage 150 V VCEO* Collector-Emitter Voltage 100 V VEBO* Emitter-Base Voltage 8 V IC* Peak Collector Current 10 A IC* Continuous Collector Current 5 A IB* Continuous Base Current 2 A TSTG* Storage Temperature -65 to 200 °°C TJ* Operating Junction Temperature -65 to 200 °°C * Lead Temperature 1/16" From Case for 10 Sec. 230 °°C PT* Power Dissipation TA = 25°°C TC = 100°°C 2 30 W W θθ JC Thermal Resistance Junction to Case 3.33 °°C/W 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX FEATURES: • High Reliability • Greater Gain Stability TO-59 APPLICATIONS: • Fast Switching • High Frequency Switching and Amplifying 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 °°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. * Indicates JEDEC registered data. |
Ähnliche Teilenummer - 2N2151 |
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Ähnliche Beschreibung - 2N2151 |
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