Datenblatt-Suchmaschine für elektronische Bauteile |
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SM5837AF Datenblatt(PDF) 4 Page - Nippon Precision Circuits Inc |
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SM5837AF Datenblatt(HTML) 4 Page - Nippon Precision Circuits Inc |
4 / 8 page SM5837AF NIPPON PRECISION CIRCUITS—4 DC Characteristics VDD = 4.75 to 5.25 V, VSS = 0 V, Ta = −20 to 70 °C unless otherwise specified AC Characteristics VDD = 4.75 to 5.25 V, VSS = 0 V, Ta = −20 to 70 °C unless otherwise specified 1. Pin CLK. 2. Pins DI0 to DI11, PARA, DL0/SDI, DL1/SICK, DL2/LEN, DL3 to DL10, OE and RSTN. 3. Pins DO0 to DO11. Parameter Symbol Condition Rating Unit min typ max Current consumption IDD VDD = 5.0 V, CLK frequency fC = 40 MHz, OE = 0 V – – 85 mA Input voltage(1) (2) VIH 2.4 – – V VIL – – 0.5 V Output voltage(3) VOH IOH = −0.4 mA 4.0 – – V VOL IOL = 1.6 mA – – 0.4 V Input current(2) IIL VIN = 0 V – 10 20 µA Input leakage current(1) (2) ILH VIN = VDD ––1 µA Input leakage current(1) ILL VIN = 0 V – – 1 µA Output high-impedance leakage current(3) IZH VOUT = VDD ––5 µA IZL VOUT = 0 V – – 5 µA Parameter Symbol Condition Rating Unit min typ max CLK clock cycle tCP1 25 – – ns CLK clock HIGH-level pulsewidth tCH1 10 – – ns CLK clock LOW-level pulsewidth tCL1 10 – – ns SICK clock cycle tCP2 50 – – ns SICK clock HIGH-level pulsewidth tCH2 20 – – ns SICK clock LOW-level pulsewidth tCL2 20 – – ns CLK, SICK and LEN rise time tCR 1.0 to 2.0 V – – 10 ns CLK, SICK and LEN fall time tCF 1.0 to 2.0 V – – 10 ns DI0 to DI11, DL0 to DL10 and RSTN setup time tS1 10 – – ns DI0 to DI11, DL0 to DL10 and RSTN hold time tH1 0–– ns SDI setup time tS2 25 – – ns SD1 hold time tH2 25 – – ns SICK rising edge → LEN rising edge tCE 25 – – ns LEN rising edge → SICK rising edge tEC 25 – – ns CLK → DO0 to D011 output delay tPD See “Load conditions 1”. – – 20 ns CLK → DO0 to D011 output hold time tOH 5–– ns OE HIGH-level pulsewidth tOEH 50 – – ns OE LOW-level pulsewidth t OEL 50 – – ns |
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