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STK681-360-E Datenblatt(PDF) 9 Page - ON Semiconductor

Teilenummer STK681-360-E
Bauteilbeschribung  Applications
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Hersteller  ONSEMI [ON Semiconductor]
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STK681-360-E Datenblatt(HTML) 9 Page - ON Semiconductor

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STK681-360-E
No. A2265-9/12
1.Substrate temperature rise
Tc-Internal average power loss PdAV characteristics (no heat sink)
0
10
20
30
40
50
60
70
80
00.5
11.5
22.5
3
3.5
Hybrid IC internal average power loss, PdAV - W
Substrate temperature rise, Tc (no heat sink) - Internal average power
dissipation, PdAV
2. Average internal power loss (Pd) at DC - motor current (Io) characteristics.
0
0.5
1
1.5
2
2.5
3
3.5
00.5
11.5
22.5
33.5
44.5
55.5
6
Moter current Io(DC) A
STK681-360-E Average internal power loss Pd vs moter Io
High side loss
Low side loss
Vcc1=24v
Vcc2=5.0v
3. Over temperature current suppression characteristics: Io – Tc.
0.0
1.0
2.0
3.0
4.0
5.0
0
102030405060708090
100
110
120
Operating substrate temperture Tc °C
STK681-360-E Over temperature current suppression characteristics
Io vs Tc < Load:2Ω + 5mH>
The over temperature current suppression function protects the driver from destruction when
an abnormal motor locked (physically constrained) state occurs.


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