Datenblatt-Suchmaschine für elektronische Bauteile |
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STK681-360-E Datenblatt(PDF) 9 Page - ON Semiconductor |
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STK681-360-E Datenblatt(HTML) 9 Page - ON Semiconductor |
9 / 12 page STK681-360-E No. A2265-9/12 1.Substrate temperature rise Tc-Internal average power loss PdAV characteristics (no heat sink) 0 10 20 30 40 50 60 70 80 00.5 11.5 22.5 3 3.5 Hybrid IC internal average power loss, PdAV - W Substrate temperature rise, Tc (no heat sink) - Internal average power dissipation, PdAV 2. Average internal power loss (Pd) at DC - motor current (Io) characteristics. 0 0.5 1 1.5 2 2.5 3 3.5 00.5 11.5 22.5 33.5 44.5 55.5 6 Moter current Io(DC) A STK681-360-E Average internal power loss Pd vs moter Io High side loss Low side loss Vcc1=24v Vcc2=5.0v 3. Over temperature current suppression characteristics: Io – Tc. 0.0 1.0 2.0 3.0 4.0 5.0 0 102030405060708090 100 110 120 Operating substrate temperture Tc °C STK681-360-E Over temperature current suppression characteristics Io vs Tc < Load:2Ω + 5mH> The over temperature current suppression function protects the driver from destruction when an abnormal motor locked (physically constrained) state occurs. |
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Ähnliche Beschreibung - STK681-360-E |
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