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MTB032P06AV8 Datenblatt(PDF) 5 Page - Cystech Electonics Corp.

Teilenummer MTB032P06AV8
Bauteilbeschribung  P-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB032P06AV8 Datenblatt(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 5/9
MTB032P06AV8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Normalized Threshold Voltage vs Junction
Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
VDS=-5V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg, Total Gate Charge(nC)
VDS=-48V
ID=-6A
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
DC
10ms
1ms
TA=25°C, Tj=150°C
VGS=-10V, RθJA=50°C/W
Single Pulse
RDS(ON)
Limited
1s
100
μs
100ms
Maximum Drain Current vs JunctionTemperature
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V, RθJA=50°C/W


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