51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

2SJ652

P-Channel Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

ON-resistance RDS(on)1=28.5mΩ(typ.)

•

Input capacitance Ciss=4360pF (typ.)

•

4V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--60

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--28

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--112

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C

30

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

343

mJ

Avalanche Current *2

IAV

--28

A

Note :

*1 VDD=--30V, L=500μH, IAV=--28A (Fig.1)

*2 L≤500μH, single pulse

Package Dimensions

unit : mm (typ)

7529-001

Ordering number : EN7625A

Product & Package Information

• Package

: TO-220F-3SG

• JEITA, JEDEC

: SC-67

• Minimum Packing Quantity

: 50 pcs./magazine

Marking

Electrical Connection

1

3

2

J652

LOT No.

1 : Gate

2 : Drain

3 : Source

TO-220F-3SG

10.16

0.8

1.47 MAX

4.7

2.54

2.76

12

3

0.5

2.54

2.54

3.18

(0.84)

DETAIL-A

A

EMC

FRAME

2SJ652-1E