MMSF3P03HDR2 datasheet(7/12 Pages) ONSEMI

Teilenummer	MMSF3P03HDR2

Bauteilbeschribung	P?묬hannel Power MOSFET

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MMSF3P03HD

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TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

0

25

50

75

100

125

400

ID = 9 A

150

600

500

300

200

100

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

10

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

VGS = 20 V

SINGLE PULSE

TC = 25°C

10

0.1

dc

10 ms

1

100

Mounted on 2

″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″

thick single sided), 10s max.

1 ms

100

µs

10

µs

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 14. Thermal Response

Figure 15. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

t, TIME (s)

1

0.1

0.01

D = 0.5

SINGLE PULSE

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02

1.0E+03

0.001

10

0.0163

Ω

0.0652

Ω

0.1988

Ω

0.6411

Ω

0.9502

Ω

72.416 F

1.9437 F

0.5541 F

0.1668 F

0.0307 F

Chip

Ambient

Normalized to θja at 10s.

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