Datenblatt-Suchmaschine für elektronische Bauteile |
|
MMSF2P02ER2 Datenblatt(PDF) 5 Page - ON Semiconductor |
|
MMSF2P02ER2 Datenblatt(HTML) 5 Page - ON Semiconductor |
5 / 9 page MMSF2P02E http://onsemi.com 5 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 1 100 10 10 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 0.4 0.8 1.2 2 Figure 10. Diode Forward Voltage versus Current 1.6 0.6 0.8 1.2 1.4 1.6 1 0 TJ = 25°C VGS = 0 V VDD = 10 V ID = 2 A VGS = 10 V TJ = 25°C tf td(off) td(on) tr Figure 11. Reverse Recovery Time (trr) Figure 12. Maximum Rated Forward Biased Safe Operating Area t, TIME di/dt = 300 A/ μs Standard Cell Density High Cell Density tb trr ta trr 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 VGS = 20 V SINGLE PULSE TC = 25°C 10 0.1 dc 10 ms 1 100 100 Mounted on 2 ″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10s max. 1 ms |
Ähnliche Teilenummer - MMSF2P02ER2 |
|
Ähnliche Beschreibung - MMSF2P02ER2 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |