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SB10015M-TL-E Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer SB10015M-TL-E
Bauteilbeschribung  Schottky Barrier Diode
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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SB10015M
No. A0444-2/4
Electrical Characteristics atTa=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=0.1mA
15
V
Forward Voltage
VF1
IF=0.5A
0.43
0.48
V
VF2
IF=1.0A
0.49
0.54
V
Reverse Current
IR
VR=7.5V
3
mA
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Thermal Resistance
Rth(j-a)
When mounted in Cu-foiled area of
0.72mm2
×0.03mm on glass epoxy substrate
185
°C / W
trr Test Circuit
Ordering Information
Device
Package
Shipping
memo
SB10015M-TL-E
MCPH3
3,000pcs./reel
Pb-Free
SB10015M-TL-W
MCPH3
3,000pcs./reel
Pb-Free and Halogen Free
Duty10%
50Ω
100Ω
10Ω
--5V
trr
10ms
00.2
0.3
0.10.4
0.50.7
0.6
2
5
7
3
2
0.01
2
5
7
3
0.1
0.001
IT11204
IT11205
0
0.0001
0.01
0.001
0.1
1.0
10
10000
100
1000
2468
10
12
16
14
Ta=150°C
100°C
125°C
75°C
50°C
25°C
0°C
--25°C
(2) (4) (3)
(1)
0
0
0.2
0.6
0.7
0.5
0.1
0.4
0.3
0.2
0.40.6
0.81.0
1.2
IT11206
(4)
(3)
(1)
08
16
10
12
14
6
4
2
(2)
IT11207
4.0E--0.6
0.0E+00
2.0E--0.6
6.0E--0.6
8.0E--0.6
1.0E--0.5
1.2E--0.5
2
5
7
3
3
1.0
IF -- VF
Forward Voltage, VF -- V
IR -- VR
Reverse Voltage, VR -- V
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Average Output Current, IO -- A
PF(AV) -- IO
θ
360°
Rectangular
wave
180°
360°
Sine wave
PR(AV) -- VRM
Peak Reverse Voltage, VRM -- V
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
180°
360°
VR
Sine wave
θ
360°
VR
Rectangular
wave
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.


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