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G1033-032 Datenblatt(PDF) 2 Page - Emcore Corporation

Teilenummer G1033-032
Bauteilbeschribung  1490 nm GPON Laser Diode Chip
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Hersteller  EMCORE [Emcore Corporation]
Direct Link  http://www.emcore.com
Logo EMCORE - Emcore Corporation

G1033-032 Datenblatt(HTML) 2 Page - Emcore Corporation

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DATASHEET | SEPTEMBER 2015
FIBER OPTICS
| REV 2015.09
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.
Chip Electrical/Optical Performance Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Operating Temperature
Top
-
0
+25
+85
°C
Threshold Current
ITH
+25
°C
+85
°C
-
-
7
26
20
45
mA
Slope Efficiency
QE
+25
°C
+85
°C
0.30
0.20
0.36
-
-
mW/mA
DC Resistance
R
+25
°C
-
4.5
12
Ω
Operating Voltage
VOP
-
-
1.3
1.5
V
Central Wavelength
1
λ
At Ith+20mA
1470
1490
1510
nm
Side Mode Suppression Ratio
SMSR
-
30
40
-
dB
Beam Divergence Angle, Vertical
-
Full Width, Half Max
-
32
36
deg
Beam Divergence Angle, Horizontal
-
Full Width, Half Max
-
27
30
deg
Laser Reverse Voltage
Vr
-
1
-
-
V
Laser Operating Current
2
Iop
+25
°C
-
-
100
mA
1 Unless otherwise specified
2 DC
Outline Drawing
G1033-032, 1490 nm GPON Laser Diode Chip
Figure 1: Drawing of 1490nm DFB laser diode chip. Top view and cross-sectional views are shown.


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