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TS1109-20IDT833 Datenblatt(PDF) 9 Page - Silicon Laboratories

Teilenummer TS1109-20IDT833
Bauteilbeschribung  Overcurrent and Undercurrent Detection
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Hersteller  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TS1109-20IDT833 Datenblatt(HTML) 9 Page - Silicon Laboratories

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Parameter
Symbol
Conditions
Min
Typ
Max
Units
Output Low Voltage
VSIGN_OL
VDD = 1.8 V, ISINK = 35 µA
0.2
V
Output High Voltage
VSIGN_OH
VDD = 1.8 V, ISOURCE = 35 µA VDD – 0.2
V
Note:
1. RS+ = RS– = 3.6 V, VSENSE = (VRS+ – VRS–) = 0 V, VDD = 3 V, VBIAS = 1.5 V, FILT connected to 4 kW and 470 nF in series to
GND. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA = +25 °C.
2. Extrapolated to VOUT = VFILT. IRS+ + IRS– is the total current into the RS+ and the RS– pins.
3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with
VSENSE set to –1 mV; Average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN).
4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states.
5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer
characteristic: For GAIN = 20 V/V, the applied VSENSE for GE± is ±25 mV and ±60 mV. For GAIN = 200 V/V, the applied VSENSE
for GE± is ±2.5 mV and ±6 mV.
Table 3.3. AC Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Units
CSA Buffer
Output Settling time
tOUT_s
1% Final value, VOUT = 1.3 V
Gain = 20 V/V
1.35
msec
Sign Comparator
Propagation Delay
tSIGN_PD
VSENSE = ±1 mV
3
msec
VSENSE = ±10 mV
0.4
msec
Table 3.4. Thermal Conditions
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Operating Temperature Range
TOP
–40
+85
°C
TS1109 Data Sheet
Electrical Characteristics
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.0 | 8


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