Datenblatt-Suchmaschine für elektronische Bauteile |
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STAP85025S Datenblatt(PDF) 4 Page - STMicroelectronics |
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STAP85025S Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STAP85025S 4/13 DocID15795 Rev 5 2 Electrical characteristics TCASE = +25 °C 2.1 Static 2.2 Dynamic 2.3 ESD protection characteristics Table 4. Static Symbol Test conditions Min. Typ. Max. Unit IDSS VGS = 0 V VDS = 25 V - 1µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 10 V ID = 300 mA 4.1 V VDS(ON) VGS = 10 V ID = 1 A 0.27 0.31 V CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 55 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 40 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 1.5 pF Table 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P3dB VDD = 13.6 V, IDQ = 300 mA, f = 870 MHz 25 30 - W GP VDD = 13.6 V, IDQ = 300 mA, POUT = 10 W, f = 870 MHz 15 17.3 dB hD VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 870 MHz 60 66 % Load mismatch VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 870 MHz all phase angles 20:1 VSWR Table 6. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 |
Ähnliche Teilenummer - STAP85025S |
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Ähnliche Beschreibung - STAP85025S |
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