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STPSC12H065 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPSC12H065
Bauteilbeschribung  650 V power Schottky silicon carbide diode
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STPSC12H065 Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STPSC12H065
2/8
DocID024086 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.096 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS) Forward rms current
22
A
IF(AV)
Average forward current
Tc = 130 °C
(1), δ = 0.5
1.
Value based on Rth(j-c) max.
12
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
100
90
400
A
IFRM
Repetitive peak forward current
Tc = 130 °C
(1), T
j = 150 °C, δ = 0.1
50
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature(2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Typ.
Max.
Rth(j-c)
Junction to case
1.00
1.4
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
tp = 10 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
-10
120
µA
Tj = 150 °C
-
100
500
VF
(2)
2.
tp = 500 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 12 A
-1.56
1.75
V
Tj = 150 °C
-
1.98
2.5
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
1.
Most accurate value for the capacitive charge:
Total capacitive charge
VR = 400 V,
36
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
600
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
60
dP tot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Q =
cj(vR).dvR
cj
VOUT
0


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