Datenblatt-Suchmaschine für elektronische Bauteile |
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STPSC12H065 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPSC12H065 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPSC12H065 2/8 DocID024086 Rev 2 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.096 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current Tc = 130 °C (1), δ = 0.5 1. Value based on Rth(j-c) max. 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 100 90 400 A IFRM Repetitive peak forward current Tc = 130 °C (1), T j = 150 °C, δ = 0.1 50 A Tstg Storage temperature range -55 to +175 °C Tj Operating junction temperature(2) 2. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Typ. Max. Rth(j-c) Junction to case 1.00 1.4 °C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) 1. tp = 10 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM -10 120 µA Tj = 150 °C - 100 500 VF (2) 2. tp = 500 µs, δ < 2% Forward voltage drop Tj = 25 °C IF = 12 A -1.56 1.75 V Tj = 150 °C - 1.98 2.5 Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit Qcj (1) 1. Most accurate value for the capacitive charge: Total capacitive charge VR = 400 V, 36 nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz 600 pF VR = 400 V, Tc = 25 °C, F = 1 MHz 60 dP tot dTj --------------- 1 Rth j a – () -------------------------- < Q = cj(vR).dvR cj ∫ VOUT 0 |
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