STD845DN40 datasheet(2/10 Pages) STMICROELECTRONICS

Teilenummer	STD845DN40

Bauteilbeschribung	Dual NPN high voltage transistors in a single package

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Electrical ratings

STD845DN40

2/10

Doc ID 17211 Rev 3

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCBO

Collector-base voltage (IE = 0)

700

V

VCEO

Collector-emitter voltage (IB = 0)

400

V

VEBO

Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)

V(BR)EBO

V

IC

Collector current

4

A

ICM

Collector peak current (tP < 5 ms)

8

A

IB

Base current

2

A

IBM

Base peak current (tP < 5 ms)

4

A

PTOT

Total dissipation at Tamb = 25 °C single transistor

3

W

Total dissipation at Tcase = 25 °C single transistor

45

W

TSTG

Storage temperature

-65 to 150

°C

TJ

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

RthJA

(1)

1.

Device mounted on PCB area of 25 mm².

Thermal resistance junction-ambient (single transistor)

42

°C/W

RthJC

Thermal resistance junction-case (single transistor)

2.7

°C/W

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