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STPSC12H065CT Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPSC12H065CT
Bauteilbeschribung  650 V power Schottky silicon carbide diode
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Characteristics
STPSC12H065C
2/8
DocID024809 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.192 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS)
Forward rms current
22
A
IF(AV)
Average forward current
Tc = 135 °C
(1), DC
Per diode
6
A
Tc = 135 °C
(2), DC
Per device
12
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
60
52
400
A
IFRM
Repetitive peak forward current
Tc = 135 °C
(1), T
j = 175 °C,  = 0.1
25
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature(3)
-40 to +175
°C
1.
Value based on Rth(j-c) max (per diode)
2.
Value based on Rth(j-c) max (per device)
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a

--------------------------
Table 3. Thermal resistance parameters
Symbol
Parameter
Typ.
Max.
Unit
Rth(j-c)
Junction to case
Per diode
1.6
2.4
°C/W
Per device
0.875
1.275
Rth(c)
Coupling
-
0.15
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-5
60
µA
Tj = 150 °C
-
50
250
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 6 A
-
1.56
1.75
V
Tj = 150 °C
-
1.98
2.5
1.
tp = 10 ms,  < 2%
2.
tp = 500 µs,  < 2%


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