Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI80N06S2-08 Datenblatt(PDF) 7 Page - Infineon Technologies AG |
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SPI80N06S2-08 Datenblatt(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page 2003-05-09 Page 7 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω 25 50 75 100 125 °C 175 Tj 0 50 100 150 200 250 300 350 mJ 450 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 20 40 60 80 nC 120 QGate 0 2 4 6 8 10 12 V 16 SPP80N06S2-08 0,8 VDS max DS max V 0,2 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj 50 52 54 56 58 60 62 V 66 SPP80N06S2-08 |
Ähnliche Teilenummer - SPI80N06S2-08 |
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Ähnliche Beschreibung - SPI80N06S2-08 |
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