Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI100N03S2-03 Datenblatt(PDF) 6 Page - Infineon Technologies AG |
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SPI100N03S2-03 Datenblatt(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page 2003-05-09 Page 6 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 0 1 2 3 4 5 6 Ω 8 SPP100N03S2-03 typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0 0.5 1 1.5 2 2.5 3 V 4 268 µA 1.34 mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 5 10 pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 0 10 1 10 2 10 3 10 A SPP100N03S2-03 T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
Ähnliche Teilenummer - SPI100N03S2-03 |
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Ähnliche Beschreibung - SPI100N03S2-03 |
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