Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI100N03S2L-03 Datenblatt(PDF) 3 Page - Infineon Technologies AG |
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SPI100N03S2L-03 Datenblatt(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-05-09 Page 3 SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=100A 81 192 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 6160 8180 pF Output capacitance Coss - 2400 3200 Reverse transfer capacitance Crss - 540 810 Turn-on delay time td(on) VDD=15V, VGS =10V, ID=100A, RG=1.1Ω - 15 23 ns Rise time tr - 67 100 Turn-off delay time td(off) - 83 125 Fall time tf - 65 98 Gate Charge Characteristics Gate to source charge Qgs VDD=24V, ID=100A - 19 26 nC Gate to drain charge Qgd - 57 86 Gate charge total Qg VDD=24V, ID=100A, VGS=0 to 10V - 166 220 Gate plateau voltage V(plateau) VDD=24V, ID=100A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 100 A Inv. diode direct current, pulsed ISM - - 400 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 86 108 ns Reverse recovery charge Qrr - 100 125 nC |
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