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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FSB50760SF Datenblatt(PDF) 8 Page - Fairchild Semiconductor |
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FSB50760SF Datenblatt(HTML) 8 Page - Fairchild Semiconductor |
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8 / 11 page  ©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FSB50760SF, FSB50760SFT Rev. C6 Figure 10. Example of Application Circuit 4th Notes: 1. About pin position, refer to Figure 1. 2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM ® 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low- side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state. 4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC. 5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current. COM VCC LIN HIN VB HO VS LO COM VCC LIN HIN VB HO VS LO COM VCC LIN HIN VB HO VS LO (1 ) COM (2 ) VB(U) (3 ) VCC(U) (4 ) IN(UH) (5 ) IN(UL) (6 ) N.C (7 ) VB(V) (8 ) VCC(V) (9 ) IN(VH) (10 ) IN(VL) (11 ) VTS (12 ) VB(W) (13 ) VCC(W) (14 ) IN(WH) (15 ) IN(WL) (16 ) N.C (17) P (18 ) U , VS(U) (19) NU (22) NW C1 15 V Supply C3 VDC C2 R3 R4 C6 R5 C5 For current-sensing and protection VTS (21 ) V , VS(V) (20) NV (23 ) W , VS(W) C 4 M |
Ähnliche Teilenummer - FSB50760SF |
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Ähnliche Beschreibung - FSB50760SF |
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