Ramtron

FM1608

28 July 2000

8/12

Read Cycle AC Parameters TA = -40

° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified

Symbol

Parameter

Min

Max

Units

Notes

tCE

Chip Enable Access Time ( to data valid)

120

ns

tCA

Chip Enable Active Time

120

10,000

ns

tRC

Read Cycle Time

180

ns

tPC

Precharge Time

60

ns

tAS

Address Setup Time

0

ns

tAH

Address Hold Time

10

ns

tOE

Output Enable Access Time

10

ns

tHZ

Chip Enable to Output High-Z

15

ns

1

tOHZ

Output Enable to Output High-Z

15

ns

1

Write Cycle AC Parameters TA = -40

° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified

Symbol

Parameter

Min

Max

Units

Notes

tCA

Chip Enable Active Time

120

10,000

ns

tCW

Chip Enable to Write High

120

ns

tWC

Write Cycle Time

180

ns

tPC

Precharge Time

60

ns

tAS

Address Setup Time

0

ns

tAH

Address Hold Time

10

ns

tWP

Write Enable Pulse Width

40

ns

tDS

Data Setup

40

ns

tDH

Data Hold

0

ns

tWZ

Write Enable Low to Output High Z

15

ns

1

tWX

Write Enable High to Output Driven

10

ns

1

tHZ

Chip Enable to Output High-Z

15

ns

1

tWS

Write Setup

0

ns

2

tWH

Write Hold

0

ns

2

Notes

1

This parameter is periodically sampled and not 100% tested.

2

The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing

specification associated with this relationship.

Power Cycle Timing TA = -40

° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified

Symbol

Parameter

Min

Units

Notes

tPU

VDD Min to First Access Start

1

µs

tPD

Last Access Complete to VDD Min

0

µs

Capacitance TA = 25

° C , f=1.0 MHz, VDD = 5V

Symbol

Parameter

Max

Units

Notes

CI/O

Input Output Capacitance

8

pF

CIN

Input Capacitance

6

pF