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XX1000-BD Datenblatt(PDF) 7 Page - M/A-COM Technology Solutions, Inc.

Teilenummer XX1000-BD
Bauteilbeschribung  Excellent Broadband Mixer Driver
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Hersteller  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

XX1000-BD Datenblatt(HTML) 7 Page - M/A-COM Technology Solutions, Inc.

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Active Doubler
7.5-25.0/15.0-50.0 GHz
Rev. V1
XX1000-BD
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
App Note [1] Biasing - It is recommended to separately bias each doubler stage with fixed voltages of Vd(1,2)
=5.0V, Vss=-5.0V and Vg1=-0.6V. The typical DC currents are Id1=80mA, Id2=140mA and Iss=50mA. Vg2 can
be used for active control biasing of Vd2, or it can be left open and Vd2 will self bias at approximately 140mA.
Maximum output power is achieved with Vss=-5.0V and Iss=50mA but the device will operate with reduced bias
to Vss=-2.0V and Iss=25mA. It is also recommended to use active biasing on Vd2 with Vg2 to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.
The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate
voltage for Vg2=-0.1V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make
sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement -
For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2, Vss and Vg1, 2)
needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass
capacitance (~0.01 uF) is also recommended.
Typical Application


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