KSB13003E

KSU13003E / KSD13003E

NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A

CHARACTERISTICS

SYMBOL

RATING

UNIT

TO-92

TO-251(2)

Collector-Base Voltage

V

CBO

700

V

Collector-Emitter Voltage

V

CEO

400

V

Emitter-Base Voltage

V

EBO

9V

Collector Current(DC)

I

C

1.5

A

Collector Current(Pulse)

I

CP

3A

Base Current

I

B

0.75

A

Collector Dissipation(Tc=25

)

P

C

1.1

25

W

Junction Temperature

T

J

150

Storage Temperature

T

STG

-65~150

unless otherwise noted

* Pulse Test: Pulse Width

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

V

CBO

I

700

V

Collector-Emitter Breakdown Voltage

V

CEO

I

400

V

Emitter Cut-off Current

I

EBO

V

10

*DC Current Gain

h

FE1

h

FE2

V

V

20

5

40

*Collector-Emitter Saturation Voltage

V

I

I

I

0.5

1.0

3.0

V

V

V

*Base-Emitter Saturation Voltage

V

I

I

1.2

1.4

V

V

Output Capacitance

C

ob

V

21

Current Gain Bandwidth Product

f

T

V

4

Turn on Time

t

on

Vcc=125V, Ic=2A

I

R

1.1

Storage Time

t

stg

4.0

Fall Time

t

F

0.7