Datenblatt-Suchmaschine für elektronische Bauteile |
|
YSESD9D5.0CT5G Datenblatt(PDF) 2 Page - Yea Shin Technology Co., Ltd |
|
YSESD9D5.0CT5G Datenblatt(HTML) 2 Page - Yea Shin Technology Co., Ltd |
2 / 3 page http://www.yeashin.com 2 REV.01 20140506 YSESD9D5.0CT5G DEVICE CHARACTERISTICS Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA VRWM (V) IR1(uA) @ VRWM VBR (V)@ IT (Note 1) IT VC (V) @ IPP=5 A* VC (V) @ Max IPP* IPP (A)* PPK (W)* C (pF) Device Max Max Min mA Typ Max Max Max Typ 5.0 0.5 5.6 1.0 11.6 18.6 9.4 174 15 *Surge current waveform per Figure 1. 1. VBR is measured with a pulse test current IT at an ambient temperature of 25℃. Fig1. Pulse Waveform Fig2.Power Derating Curve YSESD9D5.0CT5G IR2(uA) R Max 0.3 =3.5V @ V |
Ähnliche Teilenummer - YSESD9D5.0CT5G |
|
Ähnliche Beschreibung - YSESD9D5.0CT5G |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |