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MTB017B03Q8 Datenblatt(PDF) 4 Page - Cystech Electonics Corp.

Teilenummer MTB017B03Q8
Bauteilbeschribung  Dual P-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB017B03Q8 Datenblatt(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2016.03.01
Revised Date :
Page No. : 4/9
MTB017B03Q8
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
4
8
12
16
20
24
28
32
36
01
2
3
45
-VDS, Drain-Source Voltage(V)
10V,9V,8V,7V,6V,5V
-VGS=3V
3.5V
4V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
VGS=-4.5V
VGS=-10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
-IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
40
80
120
160
200
240
280
320
360
400
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
VGS=-4.5V, ID=-5A
RDSON@Tj=25°C : 21.2mΩ typ.
VGS=-10V, ID=-8A
RDSON@Tj=25°C : 14.2mΩ typ.
-VGS, Gate-Source Voltage(V)
ID=-8A


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