Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB020N03KM3-0-T2-G Datenblatt(PDF) 4 Page - Cystech Electonics Corp. |
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MTB020N03KM3-0-T2-G Datenblatt(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : Page No. : 4/9 MTB020N03KM3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 30 35 40 01 2 3 45 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V VGS=3V 3.5 4V 4.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 30 60 90 120 150 180 210 240 270 300 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS, Gate-Source Voltage(V) VGS=10V, ID=5A RDS(ON)@Tj=25°C : 15.3mΩ typ. ID=5A VGS=4.5V, ID=4A RDS(ON)@Tj=25°C : 19.4mΩ typ. |
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Ähnliche Beschreibung - MTB020N03KM3-0-T2-G |
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