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MTB080P06L3 Datenblatt(PDF) 5 Page - Cystech Electonics Corp.

Teilenummer MTB080P06L3
Bauteilbeschribung  P-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB080P06L3 Datenblatt(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 5/9
MTB080P06L3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Normalized Threshold Voltage vs Junction
Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
VDS=-10V
Pulsed
TA=25°C
Gate Charge Characteristics
0
2
4
6
8
10
02
468
10
12
Qg, Total Gate Charge(nC)
VDS=-48V
ID=-4A
VDS=-30V
VDS=-12V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100
μs
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
10
μs
Maximum Drain Current vs Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V, RθJA=50°C/W


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