Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB080P06N3-0-T1-G Datenblatt(PDF) 3 Page - Cystech Electonics Corp. |
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MTB080P06N3-0-T1-G Datenblatt(HTML) 3 Page - Cystech Electonics Corp. |
3 / 9 page CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 3/ 9 MTB080P06N3 CYStek Product Specification Source-Drain Diode IS - - -2.5 ISM - - -10 A *VSD - -0.82 -1.2 V VGS=0V, IS=-2A *trr - 10.7 - ns *Qrr - 6.4 - nC IF=-2A, VGS=0V, dIF/dt=100A/µs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Recommended Soldering Footprint |
Ähnliche Teilenummer - MTB080P06N3-0-T1-G |
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Ähnliche Beschreibung - MTB080P06N3-0-T1-G |
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