Datenblatt-Suchmaschine für elektronische Bauteile |
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BU1206-E3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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BU1206-E3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 6 page BU1206-E3, BU1208-E3, BU1210-E3 www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 3 Document Number: 84802 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Forward Power Dissipation Fig. 4 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode 0246 8 10 12 14 0 5 10 15 20 25 30 Average Forward Current (A) 0.3 1.1 1.3 0.01 10 0.1 1 100 0.5 0.7 0.9 Instantaneous Forward Voltage (V) T J = 150 °C T J = 125 °C T J = 25 °C 1.0 1.2 0.4 0.6 0.8 1000 20 10 60 40 30 50 70 90 100 80 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) T J = 150 °C T J = 125 °C T J = 25 °C 0.1 1 10 100 10 100 Reverse Voltage (V) |
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Ähnliche Beschreibung - BU1206-E3 |
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