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BUZ21 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUZ21
Bauteilbeschribung  Nanosecond Switching Speeds
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ21 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ21
DESCRIPTION
·19A, 100V
·RDS(ON) = 0.1Ω
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
·Related Literature
APPLICATIONS
·This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
19
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
75
℃/W
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