Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ21 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ21 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor BUZ21 DESCRIPTION ·19A, 100V ·RDS(ON) = 0.1Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Related Literature APPLICATIONS ·This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 19 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W PDF pdfFactory Pro www.fineprint.cn |
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