Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF232 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF232 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF232 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 200 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.0A 0.6 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 250 uA VSD Diode Forward Voltage IS=8.0A; VGS=0 2.0 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 800 pF Crss Reverse Transfer Capacitance 150 Coss Output Capacitance 450 tr Rise Time RGS=12.5Ω ID=5.0A; VDD=90V; RL=50Ω 25 ns td(on) Turn-on Delay Time 15 tf Fall Time 20 td(off) Turn-off Delay Time 30 PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - IRF232 |
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Ähnliche Beschreibung - IRF232 |
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