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LM148JAN-SP Datenblatt(PDF) 11 Page - Texas Instruments |
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LM148JAN-SP Datenblatt(HTML) 11 Page - Texas Instruments |
11 / 21 page LM148JAN www.ti.com SNOSAI2A – FEBRUARY 2005 – REVISED MARCH 2013 Typical Applications—LM148 fMAX = 5 kHz, THD ≤ 0.03% R1 = 100k pot. C1 = 0.0047 μF, C2 = 0.01 μF, C3 = 0.1 μF, R2 = R6 = R7 = 1M, R3 = 5.1k, R4 = 12 Ω, R5 = 240Ω, Q = NS5102, D1 = 1N914, D2 = 3.6V avalanche diode (ex. LM103), VS = ±15V A simpler version with some distortion degradation at high frequencies can be made by using A1 as a simple inverting amplifier, and by putting back to back zeners in the feedback loop of A3. Figure 20. One Decade Low Distortion Sinewave Generator VS = ±15V R = R2, trim R2 to boost CMRR Figure 21. Low Cost Instrumentation Amplifier Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: LM148JAN |
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