Datenblatt-Suchmaschine für elektronische Bauteile |
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IXXH50N60B3 Datenblatt(PDF) 2 Page - IXYS Corporation |
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IXXH50N60B3 Datenblatt(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 36A, VCE = 10V, Note 1 12 19 S C ies 2230 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 195 pF C res 44 pF Q g(on) 70 nC Q ge I C = 36A, VGE = 15V, VCE = 0.5 • VCES 16 nC Q gc 29 nC t d(on) 27 ns t ri 40 ns E on 0.67 mJ t d(off) 100 150 ns t fi 135 ns E off 0.74 1.20 mJ t d(on) 30 ns t ri 45 ns E on 1.40 mJ t d(off) 130 ns t fi 190 ns E off 1.20 mJ R thJC 0.25 °C/W R thCS TO-247 0.21 °C/W TO-220 0.50 °C/W Inductive load, T J = 25°C I C = 36A, VGE = 15V V CE = 360V, RG = 5 Note 2 Inductive load, T J = 150°C I C = 36A, VGE = 15V V CE = 360V, RG = 5 Note 2 1 - Gate 2,4 - Collector 3 - Emitter TO-220 Outline TO-247 Outline Pins: 1 - Gate 2 - Collector 3 - Emitter TO-263 Outline 1 = Gate 2,4 = Collector 3 = Emitter |
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Ähnliche Beschreibung - IXXH50N60B3 |
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