IXXN110N65C4H1 datasheet(1/7 Pages) IXYS

Teilenummer	IXXN110N65C4H1

Bauteilbeschribung	XPTTM 650V GenX4TM

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Hersteller	IXYS [IXYS Corporation]

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IXXN110N65C4H1

V

CES

= 650V

I

C110

= 110A

V

CE(sat) 



 2.35V

t

fi(typ)

= 30ns

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 175°C

650

V

CGR

T

J

= 25°C to 175°C, R

GE = 1M

650

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25°C (Chip Capability)

210

A

I

C25

Terminal Current Limit

200

A

I

C110

T

C

= 110°C

110

A

I

F110

T

C

= 110°C

70

A

I

CM

T

C

= 25°C, 1ms

470

A

SSOA

V

GE = 15V, TVJ = 150°C, RG = 2

I

CM = 220

A

(RBSOA)

Clamped Inductive Load

@V

CE  VCES

t

sc

V

GE = 15V, VCE = 360V, TJ = 150°C

10

μs

(SCSOA)

R

G

= 82

, Non Repetitive

P

C

T

C

= 25°C

750

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

V

ISOL

50/60Hz

t = 1min

2500

V~

I

ISOL 1mA

t = 1s

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in

Terminal Connection Torque

1.3/11.5

Nm/lb.in

Weight

30

g

DS100506C(01/15)

Extreme Light Punch Through

IGBT for 20-60kHz Switching

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

A, V

GE = 0V

650

V

GE(th)

I

C

= 4mA, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

50

A

T

J = 150C

3 mA

I

GES

V

CE = 0V, VGE = 20V

100

nA

V

CE(sat)

I

C

= 110A, V

GE = 15V, Note 1

1.98

2.35

V

T

J = 150C

2.34

V

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



2500V~ Isolation Voltage



Anti-Parallel Sonic Diode



Optimized for 20-60kHz Switching



Square RBSOA



Short Circuit Capability



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter



either emitter terminal can be used as

Main or Kelvin Emitter

G

E 

C

E153432

E

XPTTM 650V GenX4TM

w/ Sonic Diode

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