IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH40N65C3D1

IXYQ40N65C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

e

P

TO-247 (IXYH) Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitted

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Reverse Diode (FRED)

Symbol Test Conditions

Characteristic Values

(T

Min. Typ.

Max.

V

F

I

2.5

V

T

1.2

V

I

rr

T

23

A

t

rr

T

120

ns

R

thJC

0.60 °C/W

I

-di

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

16

26

S

C

1950

pF

C

oes

V

205

pF

C

res

40

pF

Q

g(on)

66

nC

Q

ge

I

13

nC

Q

gc

32

nC

t

d(on)

23

ns

t

ri

40

ns

E

on

0.83

mJ

t

d(off)

110

ns

t

fi

20

ns

E

0.36

0.65

mJ

t

d(on)

24

ns

t

ri

40

ns

E

on

1.60

mJ

t

d(off)

130

ns

t

fi

30

ns

E

off

0.53

mJ

R

thJC

0.50 °C/W

R

thCS

0.25

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

TO-3P Outline

1 = Gate

2,4 = Collector

3 = Emitter