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IXYX100N65B3D1 Datenblatt(PDF) 2 Page - IXYS Corporation

Teilenummer IXYX100N65B3D1
Bauteilbeschribung  Advance Technical Information
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Hersteller  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYX100N65B3D1 Datenblatt(HTML) 2 Page - IXYS Corporation

  IXYX100N65B3D1 Datasheet HTML 1Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 2Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 3Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 4Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 5Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 6Page - IXYS Corporation IXYX100N65B3D1 Datasheet HTML 7Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N65B3D1
IXYX100N65B3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 60A, VCE = 10V, Note 1
30
55
S
C
ies
4740
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
470
pF
C
res
103
pF
Q
g(on)
168
nC
Q
ge
I
C = 100A, VGE = 15V, VCE = 0.5 • VCES
30
nC
Q
gc
78
nC
t
d(on)
29
ns
t
ri
37
ns
E
on
1.27
mJ
t
d(off)
150
ns
t
fi
73
ns
E
off
1.37
2.00 mJ
t
d(on)
28
ns
t
ri
37
ns
E
on
2.35
mJ
t
d(off)
198
ns
t
fi
160
ns
E
off
2.16
mJ
R
thJC
0.18 °C/W
R
thCS
0.15
°C/W
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Inductive load, T
J = 150°C
I
C = 50A, VGE = 15V
V
CE = 400V, RG = 3
Note 2
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
V
F
I
F = 100A, VGE = 0V, Note 1
1.7
2.7
V
T
J = 150C
1.4
V
I
RM
45
A
t
rr
156
ns
R
thJC
0.36
C/W
I
F = 100A, VGE = 0V, T
J = 150C,
-d
i
F/dt = 700A/sVR = 400V
Inductive load, T
J = 25°C
I
C = 50A, VGE = 15V
V
CE = 400V, RG = 3
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80 21.34
.819
.840
E
15.75 16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.


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