Datenblatt-Suchmaschine für elektronische Bauteile |
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IXYX30N170CV1 Datenblatt(PDF) 7 Page - IXYS Corporation |
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IXYX30N170CV1 Datenblatt(HTML) 7 Page - IXYS Corporation |
7 / 7 page © 2016 IXYS CORPORATION, All Rights Reserved IXYX30N170CV1 Fig. 21. Diode Forward Characteristics 0 10 20 30 40 50 60 70 80 90 100 00.5 11.522.5 3 VF (V) TJ = 150ºC TJ = 25ºC Fig. 22. Reverse Recovery Charge vs. -diF/dt 2 3 4 5 6 7 8 100 200 300 400 500 600 700 800 900 -diF/ dt (A/µs) IF = 60A 15A 30A TJ = 150ºC VR = 1200V Fig. 23. Reverse Recovery Current vs. -diF/dt 10 20 30 40 50 60 70 80 100 200 300 400 500 600 700 800 900 diF/dt (A/µs) 15A 30A IF = 60A TJ = 150ºC VR = 1200V Fig. 24. Reverse Recovery Time vs. -diF/dt 100 150 200 250 300 350 400 450 500 550 600 100 200 300 400 500 600 700 800 900 -diF/dt (A/µs) 15A 30A IF = 60A TJ = 150ºC VR = 1200V Fig. 26. Maximum Transient Thermal Impedance (Diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 TJ (ºC) KF IRR KF QRR VR = 1200V IF = 30A -diF/dt = 700A/µs |
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