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MTB020A03KV8-0-T6-G Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB020A03KV8-0-T6-G Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.06.13 Revised Date : Page No. : 1/9 MTB020A03KV8 CYStek Product Specification Dual N-Channel Enhancement Mode MOSFET MTB020A03KV8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB020A03KV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTB020A03KV8 DFN3×3 G:Gate S:Source D:Drain BVDSS 30V 6.6A ID@VGS=10V, TA=25°C 12A ID@VGS=10V, TC=25°C RDSON@VGS=10V typ. 15.2 mΩ RDSON@VGS=4.5V typ. 20.1 mΩ D2 D1 D2 D1 D1 D2 D1 D2 S1 G2 G1 S2 S2 G1 G2 S1 Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name |
Ähnliche Teilenummer - MTB020A03KV8-0-T6-G |
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Ähnliche Beschreibung - MTB020A03KV8-0-T6-G |
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