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STK11C68-5C45M Datenblatt(PDF) 9 Page - List of Unclassifed Manufacturers |
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STK11C68-5C45M Datenblatt(HTML) 9 Page - List of Unclassifed Manufacturers |
9 / 10 page STK11C68-M 4-39 Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells. The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times. On power-up, once VCC exceeds the VCC sense volt- age of 4.0V, a RECALL cycle is automatically initiated. The voltage on the VCC pin must not drop below 4.0V once it has risen above it in order for the RECALL to operate properly. Due to this automatic RECALL, SRAM operation cannot commence until tRECALL after VCC exceeds 4.0V. 4.0V is a typical, characterized value. If the STK11C68-M is in a WRITE state at the end of power-up RECALL, the SRAM data will be corrupted. To help avoid this situation, a 10K Ohm resistor should be connected between W and system VCC. |
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Ähnliche Beschreibung - STK11C68-5C45M |
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