Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB100A10KRQ8 Datenblatt(PDF) 4 Page - Cystech Electonics Corp. |
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MTB100A10KRQ8 Datenblatt(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C059Q8 Issued Date : 2016.09.22 Revised Date : Page No. : 4/9 MTB100A10KRQ8 Preliminary CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 4 8 12 16 02 4 6 8 10 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V VDS, Drain-Source Voltage(V) 10V 9V 8V 7V 6V 5V VGS=4V VGS=3.5V VGS=3V VGS=2.5V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 50 100 150 200 250 300 350 400 450 500 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=2A VGS, Gate-Source Voltage(V) ID=2A RDS(ON)@Tj=25°C : 100mΩ typ |
Ähnliche Teilenummer - MTB100A10KRQ8 |
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Ähnliche Beschreibung - MTB100A10KRQ8 |
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