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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF8N60 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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FQPF8N60 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website： www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor FQPF8N60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.75A 1.2 Ω IGSS Gate-Body Leakage Current VGS= ±30V; VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 μ A VSD Forward On-Voltage IS= 7.5A; VGS= 0 1.4 V · |
Ähnliche Teilenummer - FQPF8N60 |
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Ähnliche Beschreibung - FQPF8N60 |
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