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SI1032R Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1032R Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si1032R/X Vishay Siliconix www.vishay.com 4 Document Number: 71172 S-40574—Rev. C, 29-Mar-04 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) −0.3 −0.2 −0.1 −0.0 0.1 0.2 0.3 −50 −25 0 25 50 75 100 125 ID = 0.25 mA Threshold Voltage Variance vs. Temperature TJ − Temperature (_C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 −50 −25 0 25 50 75 100 125 IGSS vs. Temperature TJ − Temperature (_C) 0 1 2 3 4 5 6 7 −50 −25 0 25 50 75 100 125 BVGSS vs. Temperature TJ − Temperature (_C) 10−3 10−2 1 10 600 10−1 10−4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM VGS = 2.8 V |
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