Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3991 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3991 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3991 DESCRIPTION · High Switching Speed · High Breakdown Voltage- : V(BR)CBO= 800 V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A PC Collector Power Dissipation @ TC=25℃ 300 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SC3991 |
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Ähnliche Beschreibung - 2SC3991 |
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