Datenblatt-Suchmaschine für elektronische Bauteile |
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1N23WE Datenblatt(PDF) 1 Page - Advanced Semiconductor |
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1N23WE Datenblatt(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS NF F = 9375 MHz Plo = 1.0 mW NFif = 1.5 dB RL = 100 Ω IF = 30 MHz 7.5 dB VSWR 1.3 Z IF RL = 22 Ω f = 1000 Hz 335 465 Ω Ω Ω Ω frange 8.0 12.4 GHz SILICON MIXER DIODE 1N23WE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 5.0 (ERGS) @ TC = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC PACKAGE STYLE DO- 23 |
Ähnliche Teilenummer - 1N23WE |
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Ähnliche Beschreibung - 1N23WE |
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