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MC10E104 Datenblatt(PDF) 4 Page - ON Semiconductor |
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MC10E104 Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 7 page MC10E104, MC100E104 www.onsemi.com 4 Table 6. 100E SERIES PECL DC CHARACTERISTICS (VCCx = 5.0 V; VEE = 0.0 V (Note 1)) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max IEE Power Supply Current 38 46 38 46 44 53 mA VOH Output HIGH Voltage (Note 2) 3975 4050 4120 3975 4050 4120 3975 4050 4120 mV VOL Output LOW Voltage (Note 2) 3190 3295 3380 3190 3255 3380 3190 3260 3380 mV VIH Input HIGH Voltage 3835 3975 4120 3835 3975 4120 3835 3975 4120 mV VIL Input LOW Voltage 3190 3355 3525 3190 3525 3355 3190 3355 3525 mV IIH Input HIGH Current 200 200 200 mA IIL Input LOW Current 0.5 0.3 0.5 0.25 0.5 0.2 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 7. 100E SERIES NECL DC CHARACTERISTICS (VCCx = 0 V; VEE = −5.0 V (Note 1)) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max IEE Power Supply Current 38 46 38 46 44 53 mA VOH Output HIGH Voltage (Note 2) −1025 −950 −880 −1025 −950 −880 −1025 −950 −880 mV VOL Output LOW Voltage (Note 2) −1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620 mV VIH Input HIGH Voltage −1165 −1025 −880 −1165 −1025 −880 −1165 −1025 −880 mV VIL Input LOW Voltage −1810 −1645 −1475 −1810 −1645 −1475 −1810 −1645 −1475 mV IIH Input HIGH Current 200 200 200 mA IIL Input LOW Current 0.5 0.3 0.5 0.25 0.5 0.2 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 8. AC CHARACTERISTICS (VCCx= 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 1)) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max fMAX Maximum Toggle Frequency 700 700 700 MHz tPLH tPHL Propagation Delay to Output D to Q D to F 225 500 385 725 600 1000 225 500 385 725 600 1000 225 500 385 725 600 1000 ps tSKEW Within-Device Skew (Note 2) D to Q 75 75 75 ps tJITTER Random Clock Jitter (RMS) <1 <1 <1 ps tr tf Rise/Fall Time (20−80%) Q F 100 300 425 475 700 700 100 300 425 475 700 700 100 300 425 475 700 700 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. 10 Series: VEE can vary −0.46 V / +0.06 V. 100 Series: VEE can vary −0.46 V / +0.8 V. 2. Within-device skew is defined as identical transitions on similar paths through a device. |
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