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2SCR573D Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SCR573D
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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2SCR573D Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SCR573D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
BVCBO
Collector-Base breakdown voltage
IC=100uA
50
V
BVCEO
Collector-Emitter breakdown voltage
IC=1mA
50
V
BVEBO
Emitter-Base breakdown voltage
IE=100uA
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 50mA
0.35
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
1.0
μ
A
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0
μ
A
hFE
DC Current Gain
IC= 0.1A; VCE= 3V
180
450
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
20
pF
fTNOTE
Current-Gain—Bandwidth Product
IC= 0.6A; VCE= 10V,f= 100MHz
320
MHz
NOTE:Pulsed


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